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2003
Book Article
Titel
A gas sensitive tin oxide thin-film transistor
Abstract
A novel gas sensor device is presented. Its configuration resembles a "normally on" n-type thin film transistor (TFT) with a gas sensitive metal oxide as its channel. Without a gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. With a gate-voltage-pulse operation a novel measurement technique is introduced.