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On the modeling of transient diffusion and activation of boron during post-implantation annealing

Über die Modellierung der transienten Diffusion und Aktivierung von Bor während der Ausheilung nach Ionenimplantation
 
: Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.

Institute of Electrical and Electronics Engineers -IEEE-:
IEDM 2004, International Electron Devices Meeting. Technical Digest
New York, NY: IEEE, 2004
ISBN: 0-7803-8684-1
S.967-970
International Electron Devices Meeting (IEDM) <50, 2004, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
boron; silicon; diffusion; activation; simulation; modeling

Abstract
A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks. In industrially relevant situation, it needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This article describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon.

: http://publica.fraunhofer.de/dokumente/N-26048.html