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Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control

Elektrische Deaktivierung und Diffusion von Bor in voramorphisierten ultraflachen p/n-Übergängen: Transport von Eigenzwischengitteratomen und die Steuerung über eine Koimplantation von Fluor
 
: Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.

Institute of Electrical and Electronics Engineers -IEEE-:
IEDM 2004, International Electron Devices Meeting. Technical Digest
New York, NY: IEEE, 2004
ISBN: 0-7803-8684-1
S.971-974
International Electron Devices Meeting (IEDM) <50, 2004, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
boron; silicon; diffusion; activation; simulation; modeling; fluorine

Abstract
This work presents breakthrough results on the physics and modeling of deactivation and transient enhanced diffusion of boron in preamorphized (PAI) ultrashallow junctions, and the mechanisms by which fluorine co-implantation controls these processes. The results providea much-needed general physical framework for the evaluation of novel equipment and thermal processes beyond the 50 nm technology node.

: http://publica.fraunhofer.de/dokumente/N-26044.html