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GaN-on-Si enhancement mode metal insulator semiconductor heterostructure field effect transistor with on-current of 1.35A/mm

 
: Hahn, H.; Benkhelifa, F.; Ambacher, O.; Alam, A.; Heuken, M.; Yacoub, H.; Noculak, A.; Kalisch, H.; Vescan, A.

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Japanese journal of applied physics 52 (2013), Nr.9, Art. 090204, 4 S.
ISSN: 0021-4922
ISSN: 1347-4065
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
GaN-on-Si transistors are regarded as a candidate for future power-switching applications. Beside the necessity to achieve enhancement mode behavior, on-resistance and maximum gate voltage are still limited for GaN-based transistors on Si substrate. Here, an enhancement mode metal insulator semiconductor heterostructure field effect transistor on Si substrate with record on-current of 1.35A/mm and threshold voltage of +0.82 V is demonstrated. The corresponding gate current is still well below 1mA/mm at 6.5 V gate voltage. By comparison of measured and simulated CV curves, the density of interface states introduced by the insulator is shown to be quasi-independent on etch damage and/or barrier material.

: http://publica.fraunhofer.de/dokumente/N-259776.html