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Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations

Selbsterhitzung von nanoskalierten SOI MOSFETs: TCAD- und Molekulardynamiksimulationen
: Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen


Institute of Electrical and Electronics Engineers -IEEE-:
19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 : Berlin, Germany, 25 - 27 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-2271-0 (Print)
ISBN: 978-1-4799-2273-4 (online)
International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) <19, 2013, Berlin>
European Commission EC
Fraunhofer IISB ()
SOI MOSFET; self-heating; temperature; molecular dynamics; TCAD

Self-heating of fully-depleted SOI MOSFETs scaled according to ITRS specifications for the year 2015 is investigated using numerical TCAD simulations and the method of molecular dynamics. The local warming-up due to self-heating of SOI-based transistors can exceed 200 K and must be considered in the simulation. Thermal properties of the few-nanometer-thin silicon layers differ significantly from those of bulk silicon. Therefore, molecular dynamics simulations were applied to quantify thermal transport in the channel of the ultra-thin-silicon body SOI transistors. Temperature distribution inside of a SOI-MOSFET was calculated using molecular dynamics simulations.