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Speed considerations for LDPD based Time-of-Flight CMOS 3D image sensors

: Süss, Andreas; Nitta, Christian; Spickermann, Andreas; Durini, Daniel; Varga, Gabor; Jung, Melanie; Brockherde, Werner; Hosticka, Bedrich J.; Vogt, Holger; Schwope, Stefan

Institute of Electrical and Electronics Engineers -IEEE-:
ESSCIRC 2013, 39th European Solid‐State Circuits Conference. Proceedings : Bucharest, Romania; JW Marriott Bucharest Grand Hotel; 16 - 20 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-0643-7 (online)
ISBN: 978-1-4799-0644-4
ISBN: 1-4799-0643-3 (online)
European Solid-State Circuits Conference (ESSCIRC) <39, 2013, Bucharest>
Fraunhofer IMS ()
Time-of-Flight (ToF); LDPD; global shutter

Recently a 128x96 pixel range imager with a pitch of 40 µm and a fill factor of 38 % was presented for 3D range imaging measurements based on the pulse modulated (PM) time-of-flight (ToF) principle. This sensor employs a highspeed photodetector called lateral drift-field photodiode (LDPD). During the characterization insufficiencies in charge transfer were observed for low-light illumination. Here, characterization and analysis of the former imager is given and a redesign that circumvents the parasitic effects is demonstrated and verified by measurements on chip and on camera level.