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Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices

: Masur, J.-M.; Rehm, R.; Schmitz, J.; Kirste, L.; Walther, M.


Infrared physics and technology 61 (2013), S.129-133
ISSN: 1350-4495
Fraunhofer IAF ()
InAs/GaSb; superlattice; empirical pseudopotential method; LWIR; Key Publication

For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model.