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High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures

 
: Weinreich, Wenke; Rudolph, Matthias; Koch, Johannes; Paul, Jan; Seidel, Konrad; Riedel, Stefan; Sundqvist, Jonas

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
ICICDT 2013, International Conference on IC Design & Technology. Proceedings : University of Pavia, Italy, May, 29th - 31st, 2013
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4740-2 (Print)
ISBN: 978-1-4673-4741-9 (Online)
ISBN: 978-1-4673-4743-3
S.227-230
International Conference on IC Design & Technology (ICICDT) <2013, Pavia>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()
metal-isolator-metal; high-k; 3D Si trench etching

Abstract
This paper focuses on zirconia and TiN based metal-isolator-metal capacitors integrated in immediate vicinity to the Si substrate. A high capacitance density is aimed by significant area enhancement realized through silicon pattering. By material optimization the capacitors also withstand higher supply voltages and show excellent temperature and reliability performance independently of the 3D structure.

: http://publica.fraunhofer.de/dokumente/N-255218.html