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Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50 nm InGaAs mHEMT technology

 
: Thome, F.; Massler, H.; Wagner, S.; Leuther, A.; Kallfass, I.; Schlechtweg, M.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
4 S.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
HEMTs; low-noise amplifier; low power electronics; MMICs; noise figure; W-band

Abstract
Two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110 GHz, respectively, are presented. The W-band amplifiers employ a threestage design in a 50nm InGaAs mHEMT technology and were optimized for minimum DC power consumption, using 2 x 10 and 2 x 5 µm transistors. For optimum bias conditions the first amplifier achieved a linear gain of more than 16.4 dB and a noise figure of less than 2.8 dB over the whole W-band, whereas the second amplifier operates in the frequency range between 80 to 110 GHz with a linear gain of over 14.5 dB and a noise figure of less than 3.3 dB. The best achieved noise figure is 2.1 dB and the maximum gain is about 23 dB. LNA 1 yields a noise figure of 3 dB and a gain of 8.9 dB at an operation frequency of 106 GHz, whilst only consuming 0.9mW of DC power.

: http://publica.fraunhofer.de/dokumente/N-255127.html