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MHEMT G-band low-noise amplifiers

 
: Kärkkäinen, M.; Kantanen, M.; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.A.I.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
4 S.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
millimeter wave integrated circuits; low-noise amplifier; MMIC amplifier; metamorphic HEMT

Abstract
To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here we describe and report the performance of several low-noise amplifier microchips intended for 183-GHz water vapor profiling application. The chips are manufactured in metamorphic high electron mobility transistor technology having a gate length of 50 nanometers. The measured results show a noise figure of 4-7 dB and 15-22 dB gain from 170 to 200 GHz.

: http://publica.fraunhofer.de/dokumente/N-255121.html