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Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications

 
: Melzer, M.; Waechtler, T.; Müller, S.; Fiedler, H.; Hermann, S.; Rodriguez, R.D.; Villabona, A.; Sendzik, A.; Mothes, R.; Schulz, S.E.; Zahn, D.R.T.; Hietschold, M.; Lang, H.; Gessner, T.

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Microelectronic engineering 107 (2013), S.223-228
ISSN: 0167-9317
Englisch
Zeitschriftenaufsatz
Fraunhofer ENAS ()

Abstract
Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that a decoration of the CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu can enhance the performance of CNT-based interconnects. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu(I) -diketonate precursor [(nBu3P)2Cu(acac)] and wet oxygen at 135 °C. This paper focuses on different thermal in situ pre-treatments of the CNTs with O2, H2O and wet O2 at temperatures up to 300 °C prior to the ALD process. Analyses by transmission electron microscopy show that in most cases the CuxO forms particles on the multi-walled CNTs (MWCNTs). This behavior can be explained by the low affinity of Cu to form carbides. Nevertheless, also the formation of areas with rather layer-like growth was observed in case of an oxidation with wet O2 at 300 °C. This growth mode indicates the partial destructi on of the MWCNT surface. However, the damages introduced into the MWCNTs during the pre-treatment are too low to be detected by Raman spectroscopy.

: http://publica.fraunhofer.de/dokumente/N-255034.html