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Simulation model validation of two common i-line photoresists

: Partel, S.; Urban, G.A.; Motzek, K.


Microelectronic engineering 110 (2013), S.75-79
ISSN: 0167-9317
Fraunhofer IISB ()

In this paper we analyze the dissolution behavior of two common i-line resists (MEGAPOSIT SPR 955-CM and AZ MiR 701) and validate the experimental findings by generating simulation models and implementing them in simulation software. It is demonstrated that with the data provided by a Dissolution Rate Monitor (DRM) the quality of lithography simulation results can improve and can speed up process development and optimization. Different process conditions were investigated to evaluate the area of validity of the simulation model. Lithography simulation software packages LayoutLAB and Dr. LiTHO were used to verify the resist models.