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Indium phosphide (InP) colloidal quantum dot based light-emitting diodes designed on Flexible PEN substrate

: Kim, Y.; Greco, T.; Ippen, C.; Wedel, A.; Kim, J.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 5th International Nanoelectronics Conference, INEC 2013 : Singapore, 2 - 4 January 2013
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4840-9 (Print)
ISBN: 978-1-4673-4841-6 (Online)
ISBN: 978-1-4673-4842-3
International Nanoelectronics Conference (INEC) <5, 2013, Singapore>
Fraunhofer IAP ()

Quantum dot light-emitting diodes (QD-LEDs) using InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) which were prepared by simple heating-up method were designed on polyethylene naphthalate (PEN) substrate for rugged optoelectronic device. The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45 %. The maximum luminance and current efficiency of InP based QD-LEDs fabricated on PEN substrate reached 640 cd/m2 and 1.0 cd/A.