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Modeling strategies for EUV mask multilayer defect dispositioning and repair

: Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheere, R.


Naulleau, P.P. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Extreme Ultraviolet (EUV) Lithography IV : 24 - 28 February 2013, San Jose, California
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8679)
ISBN: 978-0-8194-9461-0
Paper 86790Y
Conference "Extreme Ultraviolet (EUV) Lithography" <4, 2013, San Jose/Calif.>
Fraunhofer IISB ()

The paper describes a modeling approach, which enables systematic printing and compensation repair studies for multilayer defects on EUV-masks. The procedure combines an approximative model for the pre-optimization of required repair shapes with an accurate and efficient, fully rigorous modeling of the final repair shape. The obtained simulations results demonstrate the capabilities of compensation repair to reduce the impact of defects and confirm the eligibility of this technique as a valuable and important ingredient of a defect mitigation strategy for EUV masks.