Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: A new route to nanostructured solar-grade silicon

Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a about 35% increase in photocurrent for SiNW based photoelectrochemical cell.