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Large area photoconductive terahertz emitter for 1.55 µm excitation based on an InGaAs heterostructure

: Mittendorff, M.; Xu, M.; Dietz, R.J.B.; Künzel, H.; Sartorius, B.; Schneider, H.; Helm, M.; Winnerl, S.


Nanotechnology 24 (2013), Nr.21, Art. 214007, 7 S.
ISSN: 0957-4484
ISSN: 1361-6528
Fraunhofer HHI ()

We present scalable large area terahertz (THz) emitters based on a nanoscale multilayer InGaAs/InAlAs heterostructure and a microstructured electrode pattern. The emitters are designed for pump lasers working at the telecommunication wavelength of 1.55 µm. Electric THz fields of more than 2.5 V cm-1 are reached with moderate pump powers of 80 mW, the corresponding spectrum extends up to 3 THz. The saturation characteristics have been investigated for different pump laser spot sizes. For small pump powers of less than 50 mW the emitted THz field is nearly independent of the spot size, for higher pump powers and small spot sizes a clear saturation of the generated THz pulse can be observed. Hence the use of scalable emitters is especially promising for high power fibre laser systems. The spectral content of the generated radiation is nearly independent of the parameters spot size, pump power, and bias voltage, which allows for stable operation in spectroscopic applications.