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Modeling studies on alternative EUV mask concepts for higher NA

: Erdmann, A.; Fühner, T.; Evanschitzky, P.; Neumann, J.T.; Ruoff, J.; Gräupner, P.


Naulleau, P.P. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Extreme Ultraviolet (EUV) Lithography IV : 24 - 28 February 2013, San Jose, California
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8679)
ISBN: 978-0-8194-9461-0
Paper 86791Q
Conference "Extreme Ultraviolet (EUV) Lithography" <4, 2013, San Jose/Calif.>
Fraunhofer IISB ()

This paper investigates the performance of different mask options for sub-13 nm EUV-lithography with a 4× demagnication and an NA of 0.45. The considered mask options include standard binary masks, standard attenuated phase-shift masks, etched attenuated phase-shift masks and embedded-shifter phase-shift masks. The lithographic performance of these masks is investigated and optimized in terms of mask efficiency, NILS, DoF, OPC-performance and telecentricity errors. A multiobjective optimization technique is used to identify the most promising mask geometry parameters.