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On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature

 
: Wessely, P.J.; Wessely, F.; Birinci, E.; Schwalke, U.; Riedinger, B.

:

Institute of Electrical and Electronics Engineers -IEEE-:
DTIS 2012, 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era : May 16-18, 2012, Gammarth, Tunisia
Piscataway: IEEE, 2012
ISBN: 978-1-4673-1928-7 (electronic)
ISBN: 978-1-4673-1926-3 (Print)
3 S.
International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) <7, 2012, Tunis>
Englisch
Konferenzbeitrag
Fraunhofer IWM ()

Abstract
In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate. These BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio between 1×10 6 and 1×10 7 at room temperature [1, 2], exceeding previously reported values by several orders of magnitude. Furthermore, when increasing the ambient temperature to 200°C, the on/off-current ratio only degrades by one order of magnitude for BiLGFETs. Besides the excellent device characteristics, the complete CCVD fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.

: http://publica.fraunhofer.de/dokumente/N-254434.html