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Analysis of grain structure by precession electron diffraction and effects on electromigration reliability of Cu interconnects

: Cao, L.; Ganesh, K.J.; Zhang, L.; Aubel, O.; Hennesthal, C.; Zschech, E.; Ferreira, P.J.; Ho, P.S.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Interconnect Technology Conference, IITC 2012 : San Jose, California, USA, 4 - 6 June 2012
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1138-0 (print)
ISBN: 978-1-4673-1137-3 (online)
Art. 6251667, 4 S.
International Interconnect Technology Conference (IITC) <2012, San Jose/Calif.>
Fraunhofer IZFP ()

In this paper, a recently developed high resolution electron diffraction technique is employed to characterize the grain orientation and grain boundaries for 45 nm node Cu interconnects with SiCN capping. The results are applied to evaluate the grain structure effect on electromigration (EM) reliability. We first calculate the flux divergence for void formation using interfacial and grain boundary diffusivities extracted from the resistance evolution of test structures observed during EM tests. To further correlate grain structure statistics with EM failure statistics, the EM lifetime distribution for Cu interconnects with CoWP capping is analyzed using a microstructure-based statistical model.