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Demonstration of single crystal GaAs layers on CTE-matched substrates by the Smart Cut technology

 
: Jouanneau, T.; Bogumilowicz, Y.; Gergaud, P.; Delaye, V.; Barnes, J.-P.; Klinger, V.; Dimroth, F.; Tauzin, A.; Ghyselen, B.; Carron, V.

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Obeng, Y. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Graphene, Ge/III-V, nanowires, and emerging materials for post-CMOS applications 4 : The Fourth International Symposium ... was held from May 6 - 10, 2012 ... in Seattle, WA, at the 221st meeting of the Electrochemical Society
Pennington, NJ: ECS, 2012 (ECS transactions 45.2012, Nr.4)
ISBN: 978-1-566-77956-2
S.159-167
International Symposium on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applictions <4, 2012, Seattle/Wash.>
Electrochemical Society (Meeting) <221, 2012, Seattle/Wash.>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()

Abstract
Templates made of a thin single crystal GaAs layer on CTE-matched substrate (sapphire) have been realized using the Smart Cut technology. These templates can withstand high processing temperatures thanks to the CTE matching between the GaAs thin film and its support, and therefore can be used for many applications since they require no specific restriction concerning thermal treatments. The GaAs templates have been compared to conventional bulk GaAs substrates. TEM images and XRD spectra show similar crystalline quality. AFM measurements show a similar surface microroughness. Photoluminescence of a AlGaAs double heterostructure grown by MOCVD on the GaAs template shows the same intensity as a reference structure on bulk GaAs. Therefore, the GaAs templates can replace GaAs bulk substrates in various domains such as photonics devices (solar cell, laser) or high frequency electronics. ©The Electrochemical Society.

: http://publica.fraunhofer.de/dokumente/N-254284.html