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Transparent light-emitting diodes using InP based alloy-cored multishell quantum dots

: Kim, Y.; Kim, S.M.; Greco, T.; Ippen, C.; Wedel, A.; Kang, J.; Kim, Y.-H.; Oh, M.S.; Han, C.J.; Kim, J.


Institute of Electrical and Electronics Engineers -IEEE-:
25th International Vacuum Nanoelectronics Conference, IVNC 2012. Technical Digest : 9-13 July 2012, Jeju, Korea
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1983-6 (Print)
ISBN: 978-1-4673-1982-9 (Online)
ISBN: 978-1-4673-1981-2
ISBN: 978-1-4673-1984-3 (electronic)
International Vacuum Nanoelectronics Conference (IVNC) <25, 2012, Jeju/South Korea>
Fraunhofer IAP ()

InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) with high quantum yield were prepared by convenient heating-up method for a light emission layer of transparent QD light-emitting diodes (QD-LEDs). The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent quantum yield (QY) of 40 %. Using a Ca/Ag cathode, the whole QD-LED device was semi-transparent and the maximum luminance and current efficiency reach 400 cd/m 2, 0.80 cd/A.