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Device characteristics of in-situ CCVD grown bilayer graphene FETs at elevated temperatures

: Wessely, P.J.; Wessely, F.; Birinci, E.; Riedinger, B.; Schwalke, U.


Obeng, Y. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Graphene, Ge/III-V, nanowires, and emerging materials for post-CMOS applications 4 : The Fourth International Symposium ... was held from May 6 - 10, 2012 ... in Seattle, WA, at the 221st meeting of the Electrochemical Society
Pennington, NJ: ECS, 2012 (ECS transactions 45.2012, Nr.4)
ISBN: 978-1-566-77956-2
International Symposium on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applictions <4, 2012, Seattle/Wash.>
Electrochemical Society (Meeting) <221, 2012, Seattle/Wash.>
Fraunhofer IWM ()

In this paper we report on transfer-free fabrication of bilayer graphene field effect transistors (BiLGFETs) on oxidized silicon wafers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown BiLGFETs are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 10 7 at room temperature, exceeding previously reported values by several orders of magnitude. The transfer characteristic shows a pure unipolar p-type device behavior. Furthermore, when increasing the ambient temperature to 200°C, the on/off-current ratio only degrades by one order of magnitude for BiLGFETs. Besides the excellent device characteristics, the complete CCVD fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment. ©The Electrochemical Society.