Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence

GaSb-basierende 2.3 µm Diodenlaser mit reduzierter Fernfelddivergenz
: Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.


IEEE Lasers and Electro-Optics Society:
LEOS 2004, The 17th Annual Meeting of the IEEE Laser and Electro-Optics Society. Vol.1
Piscataway, NJ: IEEE, 2004
IEEE Lasers and Electro-Optics Society (Annual Meeting) <17, 2004, Rio Grande/Puerto Rico>
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared; Infrarot; GaInAsSb; GaSb; far field; Fernfeld; mode profil; Modenprofil

There is an increasing interest in room-temperature diode lasers emitting in the infrared wavelength region between 2.0 and 2.5 pm for spectroscopic gas-sensing, medical diagnostics and therapy [1]. For all of these applications, fiber-coupled laser systems are desirable, which call for a laser design with low beam divergente and concomitant high output power.