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GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence

GaSb-basierende 2.3 µm Diodenlaser mit reduzierter Fernfelddivergenz
 
: Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.

:

IEEE Lasers and Electro-Optics Society:
LEOS 2004, The 17th Annual Meeting of the IEEE Laser and Electro-Optics Society. Vol.1
Piscataway, NJ: IEEE, 2004
S.31-32
IEEE Lasers and Electro-Optics Society (Annual Meeting) <17, 2004, Rio Grande/Puerto Rico>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared; Infrarot; GaInAsSb; GaSb; far field; Fernfeld; mode profil; Modenprofil

Abstract
There is an increasing interest in room-temperature diode lasers emitting in the infrared wavelength region between 2.0 and 2.5 pm for spectroscopic gas-sensing, medical diagnostics and therapy [1]. For all of these applications, fiber-coupled laser systems are desirable, which call for a laser design with low beam divergente and concomitant high output power.

: http://publica.fraunhofer.de/dokumente/N-25414.html