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2013
Journal Article
Titel
Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
Abstract
An optically pumped GaSb-based semiconductor disk laser (SDL) emitting at 2.05 µm has been realized with a very short (380 µm long) laser cavity by high-reflectivity coating the intra-cavity SiC heatspreader, which then serves as the outcoupling mirror. Room-temperature output powers in excess of 750mW have been demonstrated in multimode operation and still 100mW in TEM00 emission, which is a more than 100x increase in output power compared to previous reports on GaSb-based micro-cavity (lC) SDLs. Mode-hop-free tunable single-frequency emission with linewidths <7MHz has been achieved which makes this type of miniaturized SDLs attractive for sensing applications requiring small-size 2-µm laser sources.
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