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Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader

 
: Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.

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Applied Physics Letters 103 (2013), Nr.4, Art. 041117, 4 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
An optically pumped GaSb-based semiconductor disk laser (SDL) emitting at 2.05 µm has been realized with a very short (380 µm long) laser cavity by high-reflectivity coating the intra-cavity SiC heatspreader, which then serves as the outcoupling mirror. Room-temperature output powers in excess of 750mW have been demonstrated in multimode operation and still 100mW in TEM00 emission, which is a more than 100x increase in output power compared to previous reports on GaSb-based micro-cavity (lC) SDLs. Mode-hop-free tunable single-frequency emission with linewidths <7MHz has been achieved which makes this type of miniaturized SDLs attractive for sensing applications requiring small-size 2-µm laser sources.

: http://publica.fraunhofer.de/dokumente/N-252498.html