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High power efficiency AlGaN-based ultraviolet light-emitting diodes

: Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.


Japanese journal of applied physics 52 (2013), Nr.8, Pt.2, Art. 08JG16, 4 S.
ISSN: 0021-4922
ISSN: 1347-4065
Fraunhofer IAF ()

High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates with an output power of 9.8 mW (22.7 mW) at a DC current of 40 mA (100 mA) are reported. The corresponding maximum external quantum efficiency and maximum power efficiency are 7.2 and 6.5 %, respectively. Based on a rate equation model, a method is presented to derive the extraction as well as the injection and internal quantum efficiency as a function of the driving current. The thus obtained injection and internal quantum efficiencies amount to 51 and 47 % at 40 mA, the extraction efficiency to 29 %.