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Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm

 
: Rämer, Jan-Martin; Ospald, Frank; Freymann, Georg von; Beigang, René

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Applied Physics Letters 103 (2013), Nr.2, Art.021119, 4 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Englisch
Zeitschriftenaufsatz
Fraunhofer IPM ()
cryogenic electronics; gallium arsenide; III-V semiconductors; photoconductivity; submillimetre wave antenna; terahertz spectroscopy; terahertz wave detectors; terahertz wave generation

Abstract
Generation and detection of terahertz radiation at 1560 nm based on low-temperature grown GaAs photoconductive antennas are demonstrated. The dependence of the DC photo current and terahertz peak amplitude on the illumination power are measured and found to follow a superlinear power law proposed for sequential charge carrier excitation via midgap states. A terahertz time domain spectroscopy system employing low-temperature grown GaAs photoconductive antennas pumped at 1560 nm reaches a bandwidth of 4.5 THz and a peak signal to noise ratio of 29 dB, while the reference measurement at 780 nm reaches 40 dB and a bandwidth of approximately 3 THz.

: http://publica.fraunhofer.de/dokumente/N-251990.html