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Analysis of metal-metal contacts in RF MEMS switches

: Kurth, S.; Voigt, S.; Haas, S.; Bertz, A.; Kaufmann, C.; Gessner, T.; Akiba, A.; Ikeda, K.


Ramesham, Rajeshuni (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Reliability, packaging, testing, and characterization of MOEMS/MEMS and nanodevices XII : 4 - 5 February 2013, San Francisco, California, United States
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8614)
ISBN: 978-0-8194-9383-5
Paper 861403
Conference "Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices" <12, 2013, San Francisco/Calif.>
Fraunhofer ENAS ()

This contribution reports on the analysis of metal-metal contacts of MEMS switches. A novel high aspect ratio MEMS fabrication sequence in combination with wafer level packaging is applied for fabrication of an RF MEMS switch with lateral motion. It allows for a relatively large actuation electrode area in a small package, and for high actuation force even with an actuation voltage of 5 V. The focus of this contribution is on the contact behavior. It is shown how operation conditions as like as actuation voltage, RF power, and DC bias influence the contact resistance. The power handling capability and its influence on the contacts, and the intermodulation were investigated also.