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Hochisolierende Schicht und Verfahren zu ihrer Herstellung

Highly electrically insulating coating obtained from an insulating material useful for deposition on building component substrates by a gas sputtering process.
 
: Birkholz, M.; Jung, T.

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Frontpage ()

DE 2003-10305109 A: 20030207
DE 2003-10305109 A: 20030207
DE 10305109 A1: 20040826
C23C0014
Deutsch
Patent, Elektronische Publikation
Fraunhofer IST ()

Abstract
Die Erfindung betrifft eine elektrisch hochisolierende Schicht auf Bauteilen/Substraten aus einem Isolierstoff, wobei der Isolierstoff in nanogranularer Morphologie vorliegt und die Dicke der Schicht im Bereich 2 nm bis 100 ?m liegt.

 

DE 10305109 A UPAB: 20040928 NOVELTY - Highly electrically insulating coating from an insulating material deposited on building component substrates where the insulating material has nanogranular morphology and the layer thickness is 2 nm to 100 micron. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a process for preparation of the coating by gas sputtering using a gas sputtering source as cathode with cathode atomization at a working pressure of 0.01-100 mbar, with production of a plasma which is applied to the building component/substrate using a direct or alternating voltage to the building component/substrate. USE - The coating is useful for application as a thin film to building components. ADVANTAGE - The process used avoids some of the drawbacks of previous processes e.g. chemical vapor phase deposition (CVD) and magnetron atomizing and magnetron sputtering processes i.e. poor stability of the polymers used and the necessity of using very high voltages e.g. as high as 800-1000 deg. C in the CVD process.

: http://publica.fraunhofer.de/dokumente/N-24819.html