Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Extended model for platinum diffusion in silicon

Erweitertes Modell für die Diffusion von Platin in Silicium
: Badr, E.; Pichler, P.; Schmidt, G.

Postprint urn:nbn:de:0011-n-2470448 (233 KByte PDF)
MD5 Fingerprint: be807b3ac8b5c7c0602ec3d37fc55452
© 2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 4.7.2013

Institute of Electrical and Electronics Engineers -IEEE-:
PRIME 2013, 9th Conference on Ph.D. Research in Microelectronics and Electronics : Villach, Austria, June 24th-27th, 2013
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4580-4 (Print)
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) <9, 2013, Villach>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
platinum diffusion; silicon; DLTS

Close to the wafer surfaces, our platinum diffusion experiments were found to be at gross discrepancy with the predictions of well-established diffusion models. These differences are associated with the ramping-down of the temperature at the end of the diffusion processes. To obtain a consistent model able to explain the experiments reported previously in the literature together with our experiments, energy barriers had to be included for the various reactions rate. For the Frank-Turnbull, kick-out and bulk recombination reactions, barrier heights of 0.55, 0.16, and 0.57 eV were determined, respectively. The newly established model is able to reproduce platinum diffusion for a considerably wider range of experimental conditions than models before.