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Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%

 
: Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.

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Volltext (PDF; )

International Conference on Compound Semiconductor MANufacturing TECHnology, CS MANTECH 2013. Digest of papers : May 13th - 16th, 2013, New Orleans, Louisiana, USA
New Orleans/La., 2013
S.121-124
International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH) <28, 2013, New Orleans/La.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()
GaN; SiC; HEMT

Abstract
We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on substrate, GaN epiwafer and electronic device level. Epitaxial layers and AlGaN/GaN transistors with both low leakages and high power added efficiency are realized on both types of substrates with very similar quality. Minor differences in substrate quality, epitaxial growth and HEMT performance are discussed.

: http://publica.fraunhofer.de/dokumente/N-243532.html