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Noise characteristics of InAs/GaSb superlattice infrared photodiodes

: Wörl, A.; Kleinow, P.; Rehm, R.; Schmitz, J.; Walther, M.


Physica status solidi. C 10 (2013), Nr.5, S.744-747
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <39, 2012, Santa Barbara/Calif.>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
shot noise; noise measurement setup; InAs/GaSb superlattice photodiode; infrared photodiode

A sophisticated noise measurement setup employing a switching unit to measure statistically relevant numbers of InAs/GaSb superlattice photodiodes has been developed. The noise current resolution limit of 20 fA Hz(-1/2) enables the characterization of focal plane array-sized InAs/GaSb superlattice homojunction photodiodes for the long-wavelength infrared at 77 K. To resolve midwavelength infrared photodiodes a junction area of about (400 µm)2 is required. Without switching unit and by using a dedicated low noise amplifier, noise currents down to 2 fA Hz(-1/2) can be achieved, allowing the noise characterization of mid-wavelength photodiodes with smaller junction areas. With this setup longwavelength and mid-wavelength InAs/GaSb superlattice photodiodes, with generation-recombination limited dark current behavior, are investigated at 77 K. The measured diode noise follows the theoretically predicted shot noise level within the white noise part of the spectra.