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Line sensor for fast, time-resolved spectroscopy measurements

: Poklonskaya, Elena; Durini, Daniel; Jung, Melanie; Schrey, Olaf M.; Brockherde, Werner


AMA Fachverband für Sensorik e.V., Wunstorf:
AMA Conferences 2013. Proceedings. With SENSOR, OPTO, IRS 2. CD-ROM : Nürnberg Exhibition Centre, Germany, 14. - 16.5.2013
Wunstorf: AMA Service, 2013
ISBN: 978-3-9813484-3-9
International Conference on Optical Technologies for Sensing and Measurement (OPTO) <11, 2013, Nuremberg>
Fraunhofer IMS ()
CMOS line sensor; Lateral Drift Photodiode (LDPD); time-resolved spectroscopy

In this work a novel CMOS line sensor based on the lateral drift-field photodetector (LDPD) [1] pixel approach is presented. The proposed pixel structure features the photoactive area of 200 µm ×10 µm fulfilling the application requirements [2]. A specially designed n-well within the LDPD provides the fast and efficient transfer of the generated carries from the photoactive area into each of the sense or drain nodes. The grounded p+ layer localized on the surface of the LDPD n-well reduces the dark current generated by Schockley-Read-Hall recombination/generation centers located on the silicon surface. The UV-enhanced silicon-nitride based passivation layer guarantees the photodiode (PD) sensitivity down to 220 nm wavelength range. The presented line sensor LDPD pixel is to be employed in optical emission spectroscopy applications.