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Characterization and modeling of screen-printed metal insulator semiconductor tunnel junctions for integrated bypass functionality in crystalline silicon solar cells

: Thaidigsmann, Benjamin; Lohmüller, Elmar; Fertig, Fabian; Clement, Florian; Wolf, Andreas


Journal of applied physics 113 (2013), Nr.21, Art. 214502, 9 S.
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer ISE ()
dark conductivity; elemental semiconductors; MIS devices; p-n junctions; scanning electron microscopy; semiconductor device breakdown; silicon; silicon compounds; silver; solar cells; tunnelling

This work investigates sintered, screen-printed silver contacts on lowly doped p-type silicon with different intermediate dielectric layer systems using scanning electron microscopy and dark current-voltage measurements. The data reveal electron tunneling through a thin insulating layer as the most probable transport mechanism. A model based on Fowler-Nordheim and direct tunneling is presented that allows for the description of reverse current-voltage characteristics and the extraction of effective contact properties. The investigated screen-printed metal insulator semiconductor structures are proposed as solar cell integrated bypass that reduces the risk of hot spot generation and power loss during partial shading of a module. Furthermore, the integrated bypass approach enables the fabric ation of solar cells from silicon material that tends to show early breakdown of the p-n-junction.