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40 Gbit/s identical layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm

: Klein, H.; Bornholdt, C.; Przyrembel, G.; Sigmund, A.; Molzow, W.D.; Moehrle, M.


Institute of Electrical and Electronics Engineers -IEEE-:
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012 : Compound Semiconductor Week, 27. Aug. - 30. Aug. 2012, Santa Barbara, CA, USA
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1724-5 (online)
ISBN: 978-1-4673-1725-2 (print)
International Conference on Indium Phosphide and Related Materials (IPRM) <24, 2012, Santa Barbara/Calif.>
Fraunhofer HHI ()

We present electroabsorption modulated DFB Lasers using an identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.