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Hybrid InP-polymer 30 nm tunable DBR laser for 10 Gbit/s direct modulation in the C-Band

 
: Klein, H.; Wagner, C.; Brinker, W.; Soares, F.; de Felipe, D.; Zhang, Z.Y.; Zawadzki, C.; Keil, N.; Moehrle, M.

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Institute of Electrical and Electronics Engineers -IEEE-:
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012 : Compound Semiconductor Week, 27. Aug. - 30. Aug. 2012, Santa Barbara, CA, USA
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1724-5 (online)
ISBN: 978-1-4673-1725-2 (print)
S.20-21
International Conference on Indium Phosphide and Related Materials (IPRM) <24, 2012, Santa Barbara/Calif.>
Compound Semiconductor Week (CSW) <2012, Santa Barbara/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
A C-Band hybrid InP-polymer tunable DBR laser for direct modulation is presented. The DBR tunes 34 nm with output powers larger 8 mW and SMSRs above 40 dB. 10 Gbit/s operation shows open eye diagrams.

: http://publica.fraunhofer.de/dokumente/N-241964.html