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Transfer-free grown bilayer graphene transistors for digital applications

: Wessely, P.J.; Wessely, F.; Birinci, E.; Riedinger, B.; Schwalke, U.

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Solid-State Electronics 81 (2013), S.86-90
ISSN: 0038-1101
Deutsche Forschungsgemeinschaft DFG
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()
bilayer graphene transistor; transfer-free growth on insulator; ultra-high on/off-current ratio; full silicon CMOS compatible

We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 10(7) at room temperature, exceeding previously reported values by several orders of magnitude. This will allow a simple and low-cost integration of graphene devices for digital nanoelectronic applications in a hybrid silicon CMOS environment for the first time.