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Fast electroless fabrication of uniform mesoporous silicon layers

: Li, X.P.; Xiao, Y.J.; Yan, C.L.; Song, J.W.; Talalaev, V.; Schweizer, S.L.; Piekielska, K.; Sprafke, A.; Lee, J.H.; Wehrspohn, R.B.

Preprint urn:nbn:de:0011-n-2418368 (734 KByte PDF)
MD5 Fingerprint: 0c8af4d5b71a37440298b60994eee7fe
Erstellt am: 5.12.2014

Electrochimica Acta 94 (2013), S.57-61
ISSN: 0013-4686
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()

We present a new route for the fabrication of mesoporous silicon using Pt nanoparticle-assisted chemical etching. In contrast to stain etching, the mesoporous silicon films show good uniformity. The porosity and thickness can be tuned well via adjusting the HF and H2O2 concentration. Etching rates of more than 1.7 mu m/min have been obtained under optimized conditions. The charge transfer through the Pt Si nano-Schottky contact was simulated to qualitatively explain the observed phenomenon. Our approach will allow a much simpler and cheaper route to fabricate mesoporous silicon layers compared to electrochemical etching as used in the area of surface micromachining and layer transfer techniques.