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Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

: Kato, H.; Wolfer, M.; Schreyvogel, C.; Kunzer, M.; Müller-Sebert, W.; Obloh, H.; Yamasaki, S.; Nebel, C.E.


Applied Physics Letters 102 (2013), Nr.15, Art. 151101, 5 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer IAF ()

Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV (-) to the neutral charged state NV(0) when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.