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Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Kontrolle der Hintergrunddotierung von InAs/(GaIn)Sb Infrarot-Übergittern
: Bürkle, L.; Fuchs, F.; Schmitz, J.; Pletschen, W.


Applied Physics Letters 77 (2000), Nr.11, S.1659-1661
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
InAs/(GaIn)Sb superlattice; InAs/(GaIn)Sb Übergitter; infrared detector; Infrarotdetektor; background doping; Hintergrunddotierung

Magnetotransport and photoluminescence (PL) measurements on InAs/(Galn)Sb superlattices (SLs) .grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n-type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs.