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Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

: Thrun, Xaver; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Steidel, Katja; Guerrero, Douglas; Figueiro, Thiago; Bartha, Johann W.


Somervell, M.H. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Advances in Resist Materials and Processing Technology XXX : 24 - 28 February 2013; San Jose Convention Center and San Jose Marriott, California
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8682)
ISBN: 978-0-8194-9464-1
Paper 86820Z
Conference "Advances in Resist Materials and Processing Technology" <30, 2013, San Jose/Calif.>
Fraunhofer IPMS ()
assisting underlayer; e-beam direct write; proximity effect correction; trilayer process; RLS tradeoff

Resist processing for future technology nodes becomes more and more complex. The resist film thickness is getting thinner and hardmask concepts (trilayer) are needed for reproducible etch transfer into the stack. Additional layers between resist and substrate are influencing the electron scattering in e-beam lithography and may also improve sensitivity and resolution.
In this study, bare silicon wafers with different assisting underlayers were processed in a 300 mm CMOS manufacturing environment and were exposed on a 50 keV VISTEC SB3050DW variable-shaped electron beam direct writer at Fraunhofer CNT. The underlayers are organic-inorganic hybrid coatings with different metal additives. The negative-tone resist was evaluated in terms of contrast, sensitivity, resolution and LWR/LER as a function of the stack. The interactions between resist and different assisting underlayers on e-beam direct writing will be investigated. These layers could be used to optimize the trade-off among resolution, LWR and sensitivity in future applications.