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Control of phosphorus doping profiles for co-diffusion processes

: Rothhardt, P.; Stoffels, T.; Keding, R.; Belledin, U.; Wolf, A.; Biro, D.

Volltext urn:nbn:de:0011-n-2365699 (158 KByte PDF)
MD5 Fingerprint: 67b0cb3599425244a6c250aa6d9e80c7
Erstellt am: 12.4.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

We present an innovative versatile POCl3 diffusion process. Two separate deposition stages allow for independent manipulation of depth and surface concentration in one diffusion step. This manipulation is achieved solely by variation of the N2-POCl3 gas flow during deposition. The thermal budget of the diffusion process is suitable for simultaneous diffusion from borosilicateglass (BSG). This makes this process a promising candidate for co-diffusion for a wide range of advanced solar cell concepts. The wide applicability is supported by measurements of the contact resistance and dark saturation current density that prove tunability with respect to both parameters.