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Sputtered aluminum oxide for rear side passivation of p-type silicon solar cells

: Krugl, G.

Volltext urn:nbn:de:0011-n-2365452 (147 KByte PDF)
MD5 Fingerprint: 4fb996213ae89caf466ab699e7c2f1b3
Erstellt am: 4.5.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

Aluminum oxide is an excellent candidate for the surface passivation of silicon wafers. Due the incorporation of a high density of negative charges near the interface surface and a low defect density a very good passivation can be achieved. Today, aluminum oxide layers are predominantly deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. Reactive sputtering is an alternative not requiring trimethylaluminum. Nevertheless, there are doubts concerning the passivation quality of sputtered aluminum oxide. In this contribution we analyse the influence of deposition parameters on the properties of the sputtered layers. Measurements of interface defects density and the density of fixed charges at the interface can explain a good passivation quality after firing. Additionally, results for LFC-PERC solar cells are presented showing a statistically significant improve in efficiency compared to standard BSF solar cells. This can be explained by a lower recombination rate and a higher reflectivity at the rear side of the solar cell.