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Thermal stability investigations of PECVD Al2O3 films discussing a possibility of improving surface passivation by re-hydrogenation after high temperature processes

: Kafle, B.

Volltext urn:nbn:de:0011-n-2365363 (251 KByte PDF)
MD5 Fingerprint: d9c0cdbc77e9c592d8c8dcfe779348f4
Erstellt am: 4.5.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

This work investigates the changing passivation behavior of Al2O3 after different thermal treatments based on carrier lifetime ( eff), interface defect density (Dit) and fixed charge density (Qtot) measurements. A concept of diffusing H species into the dehydrogenated Al2O3 films, termed as re-hydrogenation, has also been investigated for the PECVD deposited Al2O3 samples. Use of a-SiNx:H as a capping layer as in Al2O3/a-SiNx:H stack provides a better thermal stability for a thin PECVD Al2O3 layer. A comparison between single Al2O3 layer and Al2O3/ a-SiNx:H passivation stack after high temperature processes has been also performed in this work.