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Selective emitters in passivated emitter and rear silicon solar cells enabling 20% on large area P-type silicon

: Jäger, U.

Volltext urn:nbn:de:0011-n-2365334 (94 KByte PDF)
MD5 Fingerprint: 5257d33864f3b610874936cba47acebc
Erstellt am: 27.4.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

We present a comparison of solar cells featuring homogeneous and selective emitters on devices with passivated surfaces. Solar cells are fabricated on high quality float zone silicon and commercial Czochralski grown silicon substrates. Three different emitter structures are compared, two homogenous ones and one selective emitter. The surfaces are passivated by a thin thermal oxide. The cells feature screen printed metallization and laser fired point contacts on the rear side. Higher conversion efficiencies are found for the cells with a selective emitter. A gain in the open circuit voltage of up to 1.3% is observed for the cells on FZ-Si. This advantage is smaller on the Cz-Si substrates and the recombination active boron oxygen complex further reduces the profit of the selective emitter in fill factor, open circuit voltage and thus conversion efficiency.