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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces
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Postprint urn:nbn:de:0011-n-2364832 (7.2 MByte PDF) MD5 Fingerprint: 2617899b5a9677f55611fe6926691253 Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Erstellt am: 24.4.2013 |
Abstract
This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.