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Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces

: Brand, A.; Knorz, A.; Zeidler, R.; Nekarda, J.-F.; Preu, R.

Postprint urn:nbn:de:0011-n-2364832 (7.2 MByte PDF)
MD5 Fingerprint: 2617899b5a9677f55611fe6926691253
Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 24.4.2013

Reutzel, E.W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Laser material processing for solar energy : 15 - 16 August 2012, San Diego, California, United States
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8473)
ISBN: 978-0-8194-9190-9
Paper 84730D
Conference "Laser Material Processing for Solar Energy" <2012, San Diego/Calif.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.