Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces

: Brand, A.; Knorz, A.; Zeidler, R.; Nekarda, J.-F.; Preu, R.

Postprint urn:nbn:de:0011-n-2364832 (7.2 MByte PDF)

MD5 Fingerprint: 2617899b5a9677f55611fe6926691253

Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Erstellt am: 24.4.2013

DOI: 10.1117/12.930491

	Reutzel, E.W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.: Laser material processing for solar energy : 15 - 16 August 2012, San Diego, California, United States Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8473) ISBN: 978-0-8194-9190-9 Paper 84730D
	Conference "Laser Material Processing for Solar Energy" <2012, San Diego/Calif.>

	Englisch
	Konferenzbeitrag, Elektronische Publikation
	Fraunhofer ISE ()
	PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

Abstract
This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.

: http://publica.fraunhofer.de/dokumente/N-236483.html