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Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes

Einfluß des Mg-Dotierprofils auf die Elektrolumineszenzeigenschaften von GaInN Multi-Quantenfilm Lichtemittiernden Dioden
: Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.


Stockman, S.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Light-emitting diodes: Research, manufacturing, and applications VIII : 27 - 28 January 2004, San Jose, California, USA
Bellingham/Wash.: SPIE, 2004 (SPIE Proceedings Series 5366)
ISBN: 0-8194-5274-2
Conference "Light-Emitting Diodes - Research, Manufacturing, and Applications" <2004, San Jose/Calif.>
Fraunhofer IAF ()
group III-nitrides; Gruppe III-Nitride; semiconductor; Halbleiter; heterostructure; Heterostruktur; optoelectronic device; optoelektronisches Bauelement; devices; Bauelement

The influence of the Mg doping profile on the electroluminescence efficiency of GaInN light emitting diodes (LED) has been investigated. The Mg doping profile is influenced by segregation as well as by diffusion during the growth. The diffusion of the Mg dopants into the active region can be controlled by the growth temperature of the Mg doped layers. An increase in Mg concentration close the active region results in an improved hole injection and thus in a higher electroluminescence efficiency of the GaInN quantum wells. However an excessive spread of the Mg doping atoms towards the GaInN quantum well active region leads to nonradiative recombination and thus a lower output power of the LEDs. An LED test structure containing multiple quantum wells which differ in In content and emission wavelength was used to probe the spatial distribution of the radiative recombination of electrons and holes in the active region and to clarify the influence of Mg dopants in the active region on nonradiative recombination.