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Fast method to determine the structural defect density of 156 x 156 mm2 Mc-Si wafers

: Bakowskie, R.; Kesser, G.; Richter, R.; Lausch, D.; Eidner, A.; Clemens, P.; Petter, K.

Postprint urn:nbn:de:0011-n-2364584 (1.2 MByte PDF)
MD5 Fingerprint: 328976e5e85efe19e5e9c86d4ad88d71
Erstellt am: 29.5.2014

Energy Procedia 27 (2012), S.179-184
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <2, 2012, Leuven>
Konferenzbeitrag, Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()
structural defects; defect density; dislocations; defect mapping; multicrystalline silicon

Today a remaining challenge is to determine the structural defect density (SDD) on a whole 156 x 156 mm2 multicrystalline (mc) silicon wafer over a timescale of a few minutes. In this contribution a new method is introduced to determine the SDD on large scale mc-Si wafers. The main advantage of the method presented is the possibility to obtain a complete map of the SDD of a 156 x 156 mm2 mc-Si wafer as well as a quantitative SDD analysis of the wafer in just a few minutes. Furthermore, the simple and quick sample preparation as well as the application of standard measurement equipment results in a convenient and cost-effective analysis tool. With these advantages, analysis of SDDs on large quantities of wafers, e.g. across the ingot height or width, can be easily realized in a few hours.