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A new technique for non-invasive short-localisation in thin dielectric layers by electron beam absorbed current (EBAC) imaging

 
: Simon-Najasek, M.; Jatzkowski, J.; Große, C.; Altmann, F.

American Society for Metals -ASM-, Metals Park/Ohio; ASM International:
ISTFA 2012, conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA
Materials Park, Ohio: ASM International, 2012
ISBN: 1-615-03979-1
ISBN: 978-1-615-03979-1
ISBN: 978-1-615-03995-1
S.61-66
International Symposium for Testing and Failure Analysis (ISTFA) <38, 2012, Phoenix/Ariz.>
Englisch
Konferenzbeitrag
Fraunhofer IWM ()
thin dielectric layers; electron beam absorbed current; scanning electron microscopy

Abstract
In this paper a novel approach for precise localisation of thin oxide breakdowns in transistor or capacitor structures by electron beam absorbed current (EBAC) imaging based on scanning electron microscopy will be presented. The technique significantly improves sensitivity and lateral resolution of short localisation in comparison to standard techniques, e.g. photoemission microscopy, and provides direct defect navigation within a combined FIB/SEM system for further cross section analysis. The oxide short is minimal affected by electrical stimulation preserving its original defect structure for further physical root cause analysis. The feasibility of this new technique is demonstrated on a gate oxide (GOX) and two capacitor oxide (COX) breakdown failures.

: http://publica.fraunhofer.de/dokumente/N-236410.html