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Quality control of bond strength in low-temperature bonded wafers

: Siegert, J.; Cassidy, C.; Schrank, F.; Gerbach, R.; Naumann, F.; Petzold, M.


Goorsky, M. ; Electrochemical Society -ECS-:
Semiconductor Wafer Bonding 12. Science, Technology, and Applications : Held during PRiME 2012, October 7 to 12, 2012, Honolulu, Hawaii
Pennington, NJ: ECS, 2012 (ECS transactions 50.2012, Nr.7)
ISBN: 978-1-62332-006-5
ISBN: 978-1-60768-355-1
ISSN: 1938-5862
International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications <12, 2012, Honolulu/Hawaii>
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) <2012, Honolulu/Hawaii>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IWM ()
low-temperature plasma; 3D integration of semiconductor devices; scanning acoustic microscopy

Low-temperature plasma activated wafer bonding is an important technology for the 3D integration of semiconductor devices, such as sensors and CMOS devices integrated on opposite sides on the same chip. In a volume production environment, monitoring the bond strength is essential to the overall product quality. In this publication, commonly used methods for bond strength measurement and their relative advantages and disadvantages for quality control are compared with a novel technique of sample preparation for tensile testing.