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High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range

GaInAsN und GaInAsN Quantenfilm-Diodenlaser mit hohen In-Gehalt auf InP-Substrat mit Emissionswellenlängen im Bereich 2,2-2,3 µm
 
: Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.

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IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
16th International Conference on Indium Phosphide and Related Materials, IPRM 2004. Proceedings : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8595-0
S.32-35
International Conference on Indium Phosphide and Related Materials (IPRM) <16, 2004, Kagoshima>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaInAsN; quantum well; Quantenfilm; infrared; diode laser; Infrarot; Diodenlaser; molecular beam epitaxy; Molekularstrahlepitaxie

Abstract
We report on the growth and characterization of high In-content quaternary Ga(1-x)In(x)As(1-y)N(y) (0.78 lt = x lt = 1,y lt = 0.02), grown by plasma assisted molecular beam epitaxy on InP-substrates. First, the incorporation of nitrogen in high In-content GaInAsN was analyzed by Raman spectroscopy, revealing that already a small amount of Ga in the GaInAsN alloy (x>=0.92) leads to an almost complete change from pure In-N bonding to nitrogen atoms bonded to at least on Ga-neighbor. Next, strained Ga(0.22)In(0.78)As(0.99)N(0.01)/Al(0.48)In(0.52)As QWs were optimized for long-wavelength emission. In this way room-temperature photoluminescence could be achieved at a wavelength of 2.3 µm for 11 nm wide QWs. Finally, Ga(0.22)ln(0.78)As(0.99)N(0.01) QW-diode lasers were realized, employing lattice matched Al(0.15)Ga(0.32)In(0.53)As as the material for the barriers as well as for the separate confinement layers. InP was used for the cladding layers. Ridge waveguide lasers were fabricated without any post-growth thermal annealing. These devices showed pulsed lasing up to a heat sink temperature of 190 K, for which lasing was at 2.23 µm. Higher operating temperatures as well as cw-operation were inhibited by the high threshold current density of almost 2 kA/cm2 at 190 K, but room-temperature electroluminescence could be observed at wavelengths up to 2.4 µm. As annealing studies on GaInAsN QW-test structures indicate, post-growth annealing of the laser material will lead to a significant improvement in laser performance.

: http://publica.fraunhofer.de/dokumente/N-23579.html